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可拉伸復合單層電極用于低壓電介質執行器——結論、致謝!

來源:上海謂載 瀏(liu)覽 784 次 發布時間:2021-12-17

4.結論


首(shou)次(ci)將(jiang)Langmuir-Schaefer方(fang)法(fa)用于DEAs電(dian)極(ji)的(de)(de)制(zhi)備(bei)。將(jiang)多(duo)壁碳(tan)納米管(guan)和(he)聚(烷基噻(sai)吩)結合(he)在(zai)一起,在(zai)空氣-水界面形成(cheng)穩定的(de)(de)單(dan)(dan)分(fen)子膜(mo),然后使用Langmuir-Schaefer技術(shu)將(jiang)其(qi)轉移(yi)到PDMS膜(mo)上。單(dan)(dan)層電(dian)極(ji)由嵌入鉑(bo)單(dan)(dan)層中(zhong)的(de)(de)互連多(duo)壁碳(tan)納米管(guan)網(wang)絡組成(cheng),其(qi)中(zhong)鉑(bo)賦(fu)予機械(xie)性能,而(er)多(duo)壁碳(tan)納米管(guan)確(que)保系統的(de)(de)導電(dian)性。復合(he)單(dan)(dan)分(fen)子膜(mo)可(ke)拉(la)(la)伸(shen),導電(dian)率高達(da)100%(~20 MΩ/0%應變(bian)時(shi),~5 GΩ/在(zai)100%應變(bian)下)。使用LS方(fang)法(fa)制(zhi)作圖(tu)案(an)化超(chao)薄可(ke)拉(la)(la)伸(shen)電(dian)極(ji),可(ke)以制(zhi)作具有1.4μm厚(hou)PDMS介電(dian)膜(mo)的(de)(de)薄DEA。僅(jin)在(zai)100V下,該DEA達(da)到4.0%線性應變(bian)。與(yu)DEAs通(tong)常需(xu)要(yao)的(de)(de)kV驅動電(dian)壓(ya)相比,這(zhe)種低工作電(dian)壓(ya)為DEAs開辟了新的(de)(de)應用領域(yu)。我(wo)們在(zai)這(zhe)里報告的(de)(de)LS電(dian)極(ji)是(shi)DEA在(zai)小于5V時(shi)產(chan)生全(quan)應變(bian)的(de)(de)關鍵構件:通(tong)過使用LS/LB技術(shu)制(zhi)造彈性體和(he)電(dian)極(ji),將(jiang)有可(ke)能制(zhi)造多(duo)層DEA,其(qi)中(zhong)所有層都(dou)是(shi)一個(ge)單(dan)(dan)分(fen)子厚(hou)度。這(zhe)將(jiang)是(shi)DEA技術(shu)的(de)(de)最終物理極(ji)限。


致謝


我們衷心感謝(xie)Jun Shintake博(bo)士(shi)、Matthias Imboden博(bo)士(shi)、Alexandre Poulin博(bo)士(shi)和Samuel Schlater先生的(de)有益評論(lun)和討論(lun)。這項工作是由歐盟的(de)地平線2020研(yan)究和創(chuang)新計(ji)劃在瑪麗SK·OOOWSKA居里補助(zhu)金(jin)協議,第64 1822-MICACT通(tong)過(guo)瑞士(shi)國(guo)家(jia)教(jiao)育、研(yan)究和創(chuang)新秘書處,以(yi)及瑞士(shi)國(guo)家(jia)科(ke)學基金(jin)會授予第200020號(hao)165993。


附錄A.補充(chong)數據


與本文相關的補(bu)充數據可在(zai)在(zai)線(xian)版本中找到,網址為//doi.org/10.1016/j.snb.2018.01.145.


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